BS616LV2023 Overview
Description
BS616LV2023 - Very low operation voltage : 2.4 ~ 3.6V - Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current - High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V - Automatic power down when chip is deselected - Three state outputs and TTL compatible - Fully static operation - Data retention supply voltage as low as 1.5V - Easy expansion with CE1, CE2 and OE options - I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV2023 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70/100ns in 3V operation.
Key Features
- Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
