Datasheet Details
| Part number | BS616LV8011 |
|---|---|
| Manufacturer | Brilliance Semiconductor |
| File Size | 192.10 KB |
| Description | Very Low Power/Voltage CMOS SRAM 512K X 16 bit |
| Datasheet | BS616LV8011_BrillianceSemiconductor.pdf |
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Overview: BSI .
| Part number | BS616LV8011 |
|---|---|
| Manufacturer | Brilliance Semiconductor |
| File Size | 192.10 KB |
| Description | Very Low Power/Voltage CMOS SRAM 512K X 16 bit |
| Datasheet | BS616LV8011_BrillianceSemiconductor.pdf |
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BS616LV8011 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 40mA (Max.) operating current I-grade : 50mA (Max.) operating current 1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (Max.) at Vcc=3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1,CE2 and OE options The BS616LV8011 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power
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| Part Number | Description |
|---|---|
| BS616LV8010 | Very Low Power/Voltage CMOS SRAM 512K X 16 bit |
| BS616LV8012 | Very Low Power/Voltage CMOS SRAM 512K X 16 bit |
| BS616LV8013 | Very Low Power/Voltage CMOS SRAM 512K X 16 bit |
| BS616LV8015 | Very Low Power/Voltage CMOS SRAM 512K X 16 bit |
| BS616LV8021 | Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
| BS616LV8022 | Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
| BS616LV8023 | Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
| BS616LV8025 | Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
| BS616LV1010 | Very Low Power/Voltage CMOS SRAM |
| BS616LV1623 | Very Low Power/Voltage CMOS SRAM |