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BS616LV8021 - Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Datasheet Summary

Description

BS616LV8021 Very low operation voltage : 2.7 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 1uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (M

Features

  • S Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable.

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Datasheet preview – BS616LV8021

Datasheet Details

Part number BS616LV8021
Manufacturer Brilliance Semiconductor
File Size 205.88 KB
Description Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Datasheet download datasheet BS616LV8021 Datasheet
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Full PDF Text Transcription

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable „ DESCRIPTION BS616LV8021 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (Max.) at Vcc=3.0V •Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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