BS616LV8021 Datasheet Very Low Power/voltage CMOS Sram 512k X 16 Or 1m X 8 Bit Switchable

Manufacturer: Brilliance Semiconductor

Overview: BSI .

Datasheet Details

Part number	BS616LV8021
Manufacturer	Brilliance Semiconductor
File Size	205.88 KB
Description	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Datasheet	BS616LV8021_BrillianceSemiconductor.pdf

General Description

BS616LV8021 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (Max.) at Vcc=3.0V •Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV8021 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high speed and low power

Key Features

S Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable.

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