BS616LV8021- Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8023- Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8025- Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8010- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8011- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8012- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8015- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
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BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
DESCRIPTION
BS616LV8022
• Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc= 3.0V -10 100ns (Max.) at Vcc= 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.