BS616LV8025 - Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Datasheet Summary
Description
BS616LV8025
Very low operation voltage : 4.5 ~ 5.5V
Very low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current
High speed access time : -55 55ns (Max.) at Vcc= 5.0V -70 70ns (M
Features
S
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable.
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BS616LV8022- Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8023- Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8010- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8011- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8012- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8015- Very Low Power/Voltage CMOS SRAM 512K X 16 bit
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BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
DESCRIPTION
BS616LV8025
• Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current • High speed access time : -55 55ns (Max.) at Vcc= 5.0V -70 70ns (Max.) at Vcc= 5.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.