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BS616LV8015 - Very Low Power/Voltage CMOS SRAM 512K X 16 bit

Datasheet Summary

Description

BS616LV8015 Very low operation voltage : 4.5~5.5V Very low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current High speed access time : -55 70ns (Max.) at Vcc=5V -70 70ns (Max.)

Features

  • S Very Low Power/Voltage CMOS SRAM 512K X 16 bit.

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Datasheet Details

Part number BS616LV8015
Manufacturer Brilliance Semiconductor
File Size 204.83 KB
Description Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Datasheet download datasheet BS616LV8015 Datasheet
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Full PDF Text Transcription

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit „ DESCRIPTION BS616LV8015 • Very low operation voltage : 4.5~5.5V • Very low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 3uA (Typ.) CMOS standby current • High speed access time : -55 70ns (Max.) at Vcc=5V -70 70ns (Max.) at Vcc=5V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1,CE2 and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV8015 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 4.5V to 5.
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