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BS616UV1010 - Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit

Datasheet Summary

Description

The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

Features

  • S Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010.

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Datasheet preview – BS616UV1010

Datasheet Details

Part number BS616UV1010
Manufacturer Brilliance Semiconductor
File Size 216.22 KB
Description Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
Datasheet download datasheet BS616UV1010 Datasheet
Additional preview pages of the BS616UV1010 datasheet.

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Full PDF Text Transcription

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BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 „ DESCRIPTION The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.01uA and maximum access time of 150ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers. The BS616UV1010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
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