BS616UV1010 Description
The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power.
BS616UV1010 Key Features
- DESCRIPTION
- Ultra low operation voltage : 1.8 ~ 3.6V
- Ultra low power consumption : Vcc = 2.0V C-grade : 10mA (Max.) operating current I- grade : 15mA (Max.) operating curren
- High speed access time : -15 150ns (Max.) at Vcc = 3.0V
- Input levels are CMOS-patible
- Automatic power down when chip is deselected
- Three state outputs and TTL patible
- Fully static operation
- Data retention supply voltage as low as 1.5V
- Easy expansion with CE and OE options