BS616UV1610 Datasheet | Brilliance Semiconductor

- Features Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 - DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power Features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616UV1610 has an automatic power down feature, reducing the...