BS616UV2011

Manufacturer: Brilliance Semiconductor

BS616UV2011 datasheet by Brilliance Semiconductor.

BS616UV2011 Datasheet Details

Part number	BS616UV2011
Datasheet	BS616UV2011_BrillianceSemiconductor.pdf
File Size	237.51 KB
Manufacturer	Brilliance Semiconductor
Description	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

BS616UV2011 Ultra low operation voltage : 1.8 ~ 3.6V Ultra low power consumption : 15mA (Max.) operating current I-grade:.

DESCRIPTION
Ultra low operation voltage : 1.8 ~ 3.6V
Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current
High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V
Automatic power down when chip is deselected
Three state outputs and TTL patible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin

Part Number	Description
BS616UV2021	Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616UV1010	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616UV1610	Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616UV1620	Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616UV4010	Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616UV4020	Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616UV8010	Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8011	Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8020	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable