Description
The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
- Originative New Design.
- Very Low Intrinsic Capacitances.
- Excellent Switching Characteristics.
- Unrivalled Gate Charge : 46nC (Typ. ).
- Extended Safe Operating Area.
- Lower RDS(ON) : 1.10 Ω (Typ. ) @VGS=10V.
- 100% Avalanche Tested.
- RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box
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MS10N80 Datasheet
