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MS13N30 - N-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

  • Low rDS(on) trench technology.
  • Fast switching speed.
  • Low thermal impedance.
  • RoHS compliant package.

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Datasheet Details

Part number MS13N30
Manufacturer Bruckewell
File Size 440.89 KB
Description N-Channel MOSFET
Datasheet download datasheet MS13N30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS13N30 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones Features • Low rDS(on) trench technology • Fast switching speed • Low thermal impedance • RoHS compliant package Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS13N30] © Bruckewell Technology Corporation Rev.