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MSC09N74X - 100V N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V, 70A , RDS(ON) =6.5mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • RoHS compliant package.

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Datasheet preview – MSC09N74X

Datasheet Details

Part number MSC09N74X
Manufacturer Bruckewell
File Size 549.74 KB
Description 100V N-Channel MOSFETs
Datasheet download datasheet MSC09N74X Datasheet
Additional preview pages of the MSC09N74X datasheet.

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Full PDF Text Transcription

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MSC09N74X 100V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 100V, 70A , RDS(ON) =6.
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