Datasheet Summary
100V N-Channel MOSFETs
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features
- 100V, 70A , RDS(ON) =6.5mΩ @VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- RoHS pliant package Applications
- Networking
- Load Switch
- LED applications
- Quick Charger Packing & Order Information...