MSF6N70 Datasheet | Bruckewell Technology

DESCRIPTION The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all mercial-industrial applications Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant / Halogen free package available Absolute Maximum Ratings Parameter Drain-Source Voltage (Tc=25°C unless otherwise noted) Symbol VDS ID ID IDM VGS EAS IAR EAR d V/dt PD Tj, Tstg Value 700 6.0 3.5 22 ±30 350 5.5 14.7 5.5 48 0.38 -55~+150 Unit V A A A V m J A m J V/ns W W °C Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery d V/dt Power Dissipation (TC=25°C) Power Dissipation (TC=100°C) Operating Junction and Storage Temperature NOTE: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤5.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ©Bruckewell Technology Corporation Rev. B -2013 http://.. MSF6N70 700V N-Channel MOSFET Characteristics (Tc=25°C, unless otherwise specified) Symbol Test Conditions Min. Typ. Max. Unit Static Characteristics VGS - RDS(ON) BVDSS ∆BVDSS/∆Tj IDSS IGSSF IGSSR VDS = VGS, ID=250μA VGS =10V,ID =2.8A VGS=0, ID=250μA Reference to 25°C, ID=250μA VDS =700V,VGS =0V VDS =560V, VGS =0, Tj=125°C VGS =30V,VDS =0V VGS =-30V,VDS =0V 2.0 700 1.5 0.70 1 10 100 -100 u A n A n A 4.0 1.8 V Ω V Dynamic Characteristics Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode Characteristics IS ISM VSD trr Qrr IS = 5.5A, VGS = 0 V IS = 5.5 A, VGS = 0 V di F/dt = 100 A/μs 390 3.6 5.5 22 1.5 A V n S n C VDS =560V,ID =5.5A,...