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2N3020 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Download the 2N3020 datasheet PDF. This datasheet also covers the 2N3019 variant, as both devices belong to the same npn silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL VALUE Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25º C Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature VCEO VCBO VEBO ICM PD Tj Tstg THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) R

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3019-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3020
Manufacturer CDIL
File Size 181.54 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet 2N3020 Datasheet

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Other Datasheets by CDIL

Part Number Description
2N3019 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3053 NPN SILICON PLANAR TRANSISTOR
2N3053A NPN SILICON PLANAR TRANSISTOR
2N3055HV NPN Power Transistor
2N3250 PNP SILICON PLANAR SWITCHING TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25º C Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature VCEO VCBO VEBO ICM PD Tj Tstg THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) 80 140 7 1 800 5 +200 -65 to +