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2N3020 - NPN Transistor

Download the 2N3020 datasheet PDF. This datasheet also covers the 2N3019 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3019-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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30 19 2N (SILICON) 2N3020 CASE 31 (TO·S) Collector connected to case NPN silicon annular transistors designed for highcurrent, high-frequency amplifier applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCEO VCB VEB IC PD PD TJ Tstg Value 80 140 7.0 l.0 0.8 4.6 5.0 28.