Datasheet Summary
30 19 2N
(SILICON)
CASE 31
(TO- S)
Collector connected to case
NPN silicon annular transistors designed for highcurrent, high-frequency amplifier applications.
MAXIMUM RATINGS Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature Range Storage Temperature Range
Symbol
VCEO VCB VEB
IC PD
TJ Tstg
Value 80 140
7.0 l.0
0.8 4.6 5.0 28.6 -65 to +200 -65 to + 200
Unit Vdc
Vdc
Vdc
Adc
W mWrC
W mWrC
°c...
