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2N3020 Datasheet PDF

Comset Semiconductor 2N3020

The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages.
Part No. 2N3020
Datasheet 2N3020 Download
Manufacturer
Comset Semiconductor
Description SILICON PLANAR EPITAXIAL TRANSISTORS
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2N3020 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range Ratings 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Value 80 140 7 1 0.8 Unit V V V A Watts @ Tamb = 25° @ Tcase= 25° 5 200 -65 to +200 °C °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N3019 2N3020 2N3019 2N3020 Value 35 219 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - NPN 2N3019 – 2N3020

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Test Condition(s) VCB =950 V, IE =0 VCB =90 V, IE =0, Tj =150°C Min Typ Mx Unit 80 140 7 50 30 90 40 100 40 50 30 15 40 100 80 80 30 10 10 10 100 120 300 120 10...
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