Continental Device India 2N5415
PNP SILICON HIGH VOLTAGE TRANSISTOR
| Part No. | 2N5415 |
|---|---|
| Datasheet | 2N5415 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON HIGH VOLTAGE TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL 2N5415 2N5416 Collector Emitter Voltage VCEO 200 300 Collector Base Voltage VCBO 200 350 Emitter Base Voltage VEBO 4 6 Collector Current Continuous IC (--------------------1------------------) Base Current Continuous IB (-----------------0.5------------------) Power Dissipation @ Ta=50ºC PD (--------------------1------------------) Derate Above 25ºC Power Dissipation@ Tc=25ºC PD (------------------10------------------- Derate Above 25ºC Junction Temperature Tj (--------------------200----------------- Operating And Storage Junction Tstg -65 to +200 Temperature Range UNITS V V V A A W mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) 150 ºC/W 17.5 ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCEO(sus)* IC=50mA,IB=0 Collector Cut off Current ICBO VCB=175V, IE=0 VCB=280V, IE=...
