Datasheet Details
| Part number | 2N5415 |
|---|---|
| Manufacturer | CDIL |
| File Size | 145.81 KB |
| Description | (2N5415 / 2N5416) PNP SILICON HIGH VOLTAGE TRANSISTOR |
| Datasheet | 2N5415-CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and mercial Equipment.
| Part number | 2N5415 |
|---|---|
| Manufacturer | CDIL |
| File Size | 145.81 KB |
| Description | (2N5415 / 2N5416) PNP SILICON HIGH VOLTAGE TRANSISTOR |
| Datasheet | 2N5415-CDIL.pdf |
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|
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SYMBOL 2N5415 2N5416 Collector Emitter Voltage VCEO 200 300 Collector Base Voltage VCBO 200 350 Emitter Base Voltage VEBO 4 6 Collector Current Continuous IC (--------------------1------------------) Base Current Continuous IB (-----------------0.5------------------) Power Dissipation @ Ta=50ºC PD (--------------------1------------------) Derate Above 25ºC Power Dissipation@ Tc=25ºC PD (------------------10------------------- Derate Above 25ºC Junction Temperature Tj (--------------------200----------------- Operating And Storage Junction Tstg -65 to +200 Temperature Range UNITS V V V A A W mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) 150 ºC/W 17.5 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCEO(sus)* IC=50mA,IB=0 Collector Cut off Current ICBO VCB=175V, IE=0 VCB=280V, IE=0 Collector Cutoff Current ICEO VCE=150V, IB=0 VCE=250V, IB=0 Emitter Cut off Current IEBO VEB=4V, IC=0 VEB=6V, IC=0 2N5415 >200 <50 <50 <20 2N5416 >300 <50 <50 <20 UNITS V µA µA µA µA µA µA Collector Emitter Saturation Voltage VCE(Sat) IC=50mA,IB=5mA <2.5 <2 V Base Emitter Saturation Voltage DC Current Gain VBE(Sat) hFE* IC=50mA,IB=5mA IC=50mA,VCE=10V <1.5 <1.5 30-150 30-120 V Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION DYNAMIC CHARACTERISTICS Small Signal Curr
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5415 | PNP high-voltage transistors | NXP |
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2N5415 | SILICON PNP TRANSISTORS | STMicroelectronics |
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2N5415 | PNP Transistor | Motorola |
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2N5415 | High Voltage Silicon Transistor | VPT |
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2N5415 | Silicon PNP Power Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2N5400 | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| 2N5496 | :: NPN PLASTIC POWER TRANSISTOR |
| 2N5086 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5087 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5088 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5089 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5294 | NPN PLASTIC POWER TRANSISTOR |
| 2N5296 | NPN PLASTIC POWER TRANSISTOR |
| 2N5298 | NPN PLASTIC POWER TRANSISTOR |
| 2N5320 | SILICON POWER SWITCHING TRANSISTORS |