2N5415 - High Voltage Silicon Transistor

VPT

Key Features

Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/485.
TO-39, TO-5 and UA Package Types.
Suitable For Drivers in High-Voltage, Low Current Inverters, Switching and Series Regulators Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Emitter - Base Cutoff Current VEB = -6.0 V dc IEBO µA dc.
Collector - Emitter Cutoff Collector - Emitter Cutoff Collector - Emitter Cutoff Curr.

2N5415 high voltage silicon transistor by VPT - Datasheet Preview

Datasheet Details

Part number	2N5415
Manufacturer	VPT
File Size	445.30 KB
Description	High Voltage Silicon Transistor
Datasheet	2N5415 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N5415S	High Voltage Silicon Transistor
2N5415UA	High Voltage Silicon Transistor
2N5416	High Voltage Silicon Transistor
2N5416S	High Voltage Silicon Transistor
2N5416UA	High Voltage Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5415, S, UA 2N5416, S, UA PNP Low Power, High Voltage Silicon Transistor Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/485 • TO-39, TO-5 and UA Package Types • Suitable For Drivers in High-Voltage, Low Current Inverters, Switching and Series Regulators Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Emitter - Base Cutoff Current VEB = -6.0 V dc IEBO µA dc — Collector - Emitter Cutoff Collector - Emitter Cutoff Collector - Emitter Cutoff Current Collector - Base Cutoff Current VCE = -150 V dc 2N5415, S, UA VCE = -250 V dc 2N5416, S, UA VCE = -200 V dc 2N5415, S, UA VCE = -300 V dc 2N5416, S, UA VBE = -1.