2N5415 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product specification PNP high-voltage transistors Features - Low current (max. 200 m A) - High voltage (max. 300 V). APPLICATIONS - Switching and linear amplification in military, industrial and consumer equipment. 1 handbook, halfpage 2N5415; 2N5416 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. 2 2 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N5415 2N5416 VCEO collector-emitter voltage 2N5415 2N5416 ICM Ptot h FE peak collector current total power dissipation DC current gain 2N5415 2N5416 f T transition frequency IC = - 10 m A; VCE = - 10 V; f = 5 MHz Tamb ≤ 50 °C IC = - 50 m A; VCE = - 10 V 30 30 15 150 120 - MHz open base - - - - - 200 - 300 400 1 V V m A W open emitter - -...