2N6515 Overview
Description
SYMBOL 2N6515 2N6516 2N6517 2N6519 2N6520 Collector Emitter Voltage VCEO 250 300 350 Collector Base Voltage VCBO 250 300 350 Emitter Base Voltage VEBO NPN-------------------6------------------ PNP-------------------5------------------ Collector Current Continuous IC 500 Base Current (Continuous) IB 250 Total Power Dissipation @ Ta=25ºC PD 625 Derate Above 25ºC 5.0 Operating And Storage Junction Tstg -55 to +150 Temperature Range Rth(j-a) Rth(j-c) 200 83.3 UNIT V V V V mA mA mW mW/ºC ºC ºC/W ºC/W DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCEO* IC=1mA,IB=0 2N6515 2N6516, 6519 2N6517, 6520 MIN MAX 250 300 350 UNIT V V V Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 2N6515 250 V 2N6516, 6519 300 V 2N6517, 6520 350 V Emitter Base Breakdown Voltage BVEBO IE=10µA, IC=0 NPN 6 V PNP 5 V Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICBO 2N6515 VCB =150V, IE=0 2N6516, 6519 VCE=200V, IE=0 2N6517, 6520 VCE=250V, IE=0 Emitter Cut off Current IEBO NPN VEB=5V, IC=0 PNP VEB=4V, IC = 0 DC Current Gain hFE* VCE=10V,IC=1mA 2N6515 2N6516, 6519 2N6517, 6520 2N6515 2N6516, 6519 2N6517, 6520 VCE=10V,IC=10mA 2N6515 2N6516, 6519 2N6517, 6520 VCE=10V,IC=30mA 2N6515 2N6516, 6519 2N6517, 6520 VCE=10V,IC=50mA 2N6515 2N6516, 6519 2N6517, 6520 VCE=10V,IC=100mA Base Emitter Saturation Vol.
