2N6515 Overview
Description
The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE SYMBOL VCBO VCEO VEBO VEBO IC IB PD TJ, Tstg 2N6515 2N6518 250 250 2N6516 2N6519 300 300 6.0 5.0 500 250 625 -65 to +150 2N6517 2N6520 350 350 UNITS V V V V mA mA mW °C ICBO VCB=150V ICBO VCB=200V ICBO VCB=250V IEBO VEB=5.0V (NPN) IEBO VEB=4.0V (PNP) BVCBO IC=100μA BVCEO IC=1.0mA BVEBO IE=10μA (NPN) BVEBO IE=10μA (PNP).
