The 2N6515 is a High Voltage Transistor.
| Package | TO-92-3 |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2N6515 Datasheet |
|---|---|
| Manufacturer | Micro Commercial Components |
| Overview | MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 High Voltage Transistor 625mW l. omponents 21201 Itasca Street Chatsworth !"# $ % !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 High Voltage Transistor 625mW l Through Hole Package l 150oC Junction Temperature l Voltage and Current are negative for PNP transistors Pin Co. |
| Part Number | 2N6515 Datasheet |
|---|---|
| Description | High Voltage Transistors |
| Manufacturer | onsemi |
| Overview |
NPN − 2N6515, 2N6517; PNP − 2N6520
High Voltage Transistors
NPN and PNP
Features
• Voltage and Current are Negative for PNP Transistors • These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
C.
* Voltage and Current are Negative for PNP Transistors * These are Pb *Free Devices* MAXIMUM RATINGS Rating Symbol Collector * Emitter Voltage 2N6515 2N6517, 2N6520 VCEO Value 250 350 Unit Vdc Collector * Base Voltage 2N6515 2N6517, 2N6520 VCBO 250 350 Vdc Emitter * Base Voltage VEBO Vd. |
| Part Number | 2N6515 Datasheet |
|---|---|
| Description | High Voltage Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515/D High Voltage Transistors COLLECTOR 3 COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER NPN 2N6515 2N6517 PNP 2N6519 2. . |
| Part Number | 2N6515 Datasheet |
|---|---|
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Manufacturer | Continental Device India |
| Overview | SYMBOL 2N6515 2N6516 2N6517 2N6519 2N6520 Collector Emitter Voltage VCEO 250 300 350 Collector Base Voltage VCBO 250 300 350 Emitter Base Voltage VEBO NPN-------------------6--------------. r Breakdown Voltage BVCEO* IC=1mA,IB=0 2N6515 2N6516, 6519 2N6517, 6520 MIN MAX 250 300 350 UNIT V V V Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 2N6515 250 V 2N6516, 6519 300 V 2N6517, 6520 350 V Emitter Base Breakdown Voltage BVEBO IE=10µA, IC=0 NPN 6 V PNP 5 V Co. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6515 | Central Semiconductor | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6515 | Samsung Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |