2N6515 Overview
2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: Pulse Width 300 , Duty Cycle 2% IC=1mA, IB=0 }IC=100.
2N6515 datasheet by Samsung Semiconductor.
| Part number | 2N6515 |
|---|---|
| Datasheet | 2N6515-Samsung.pdf |
| File Size | 42.01 KB |
| Manufacturer | Samsung Semiconductor |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
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2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: Pulse Width 300 , Duty Cycle 2% IC=1mA, IB=0 }IC=100.
| Brand Logo | Part Number | Description | Other Manufacturers |
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2N6515 | High Voltage Transistor | Micro Commercial Components |
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2N6515 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
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2N6515 | High Voltage Transistors | Motorola |
| 2N6515 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS | Central Semiconductor | |
| 2N6515 | High Voltage Transistors | ON Semiconductor |
View all Samsung Semiconductor datasheets
| Part Number | Description |
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