2N6515 Description
2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: Pulse Width 300 , Duty Cycle 2% IC=1mA, IB=0 }IC=100.
- Part: 2N6515
- Manufacturer: Samsung Semiconductor
- Size: 42.01 KB
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