2N6516 Description
The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are plementary silicon transistors designed for high voltage driver and amplifier applications. FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=150V ICBO VCB=200V ICBO VCB=250V IEBO VEB=5.0V (NPN) IEBO VEB=4.0V (PNP) BVCBO IC=100μA BVCEO IC=1.0mA BVEBO IE=10μA (NPN) BVEBO IE=10μA (PNP).