Continental Device India 2N657
NPN SILICON PLANAR TRANSISTOR
| Part No. | 2N657 |
|---|---|
| Datasheet | 2N657 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL VALUE Collector Emitter Voltage VCEO 100 Collector Base Voltage VCBO 100 Emitter Base Voltage VEBO 8.0 Collector Current IC 0.5 Power Dissipation @ Ta=25ºC PD 1.0 Derate Above 25ºC 5.7 Power Dissipation@ Tc=25ºC PD 4.0 Derate Above 25ºC 22.8 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature RangeELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=250µA,IB=0 Collector Base Voltage VCBO IC=100µA,IE=0 Emitter Base Voltage VEBO IC=250µA,Ic=0 Collector Cut off Current ICBO VCB=30V, IE=0 DC Current Gain hFE IC=200mA,VCE=10V Collector Emitter Saturation Voltage *VCE(Sat) IC=200mA,IB=40mA SMALL SIGNAL CHARACTERISTICS Input Impedance * | hfe | *Pulse Test: Pulse Length= 300µs, Duty Cycle <2% IB=8mA, VCE=10V UNITS V V V A W mW/ºC W mW/ºC ºC MIN MAX UNITS 100 V 100 V 8.0 V 10 µA 30 90 4.0 V 0.5 KΩ Continental Device India L...
