Datasheet Details
| Part number | 2N657 |
|---|---|
| Manufacturer | CDIL |
| File Size | 130.34 KB |
| Description | NPN SILICON PLANAR TRANSISTOR |
| Datasheet | 2N657-CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified pany NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor.
| Part number | 2N657 |
|---|---|
| Manufacturer | CDIL |
| File Size | 130.34 KB |
| Description | NPN SILICON PLANAR TRANSISTOR |
| Datasheet | 2N657-CDIL.pdf |
|
|
|
SYMBOL VALUE Collector Emitter Voltage VCEO 100 Collector Base Voltage VCBO 100 Emitter Base Voltage VEBO 8.0 Collector Current IC 0.5 Power Dissipation @ Ta=25ºC PD 1.0 Derate Above 25ºC 5.7 Power Dissipation@ Tc=25ºC PD 4.0 Derate Above 25ºC 22.8 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=250µA,IB=0 Collector Base Voltage VCBO IC=100µA,IE=0 Emitter Base Voltage VEBO IC=250µA,Ic=0 Collector Cut off Current ICBO VCB=30V, IE=0 DC Current Gain hFE IC=200mA,VCE=10V Collector Emitter Saturation Voltage *VCE(Sat) IC=200mA,IB=40mA SMALL SIGNAL CHARACTERISTICS Input Impedance * | hfe | *Pulse Test: Pulse Length= 300µs, Duty Cycle <2% IB=8mA, VCE=10V UNITS V V V A W mW/ºC W mW/ºC ºC MIN MAX UNITS 100 V 100 V 8.0 V 10 µA 30 90 4.0 V 0.5 KΩ Continental Device India Limited Data Sheet Page 1 of 3 TO-39 Metal Can Package 2N657 TO-39 Metal Can Package E All dimensions are in mm A DIM MIN MAX B A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 C D 0.40 0.53 E — 0.88 F 2.41 2.66 G 4.82 5.33 K H 0.71 0.86 J 0.73 1.02 K 12.70 — L 42 DEG 48 DEG D G 2 1 3 LH J F PIN CONFIGURATION 1.
EMITTER 2.
BASE 3.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N657 | NPN Transistor | Motorola |
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2N6573 | NPN Transistor | INCHANGE |
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