Continental Device India BCW29
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BCW29 |
|---|---|
| Datasheet | BCW29 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –Ic = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz hFE –VCB0 –VCE0 –ICM Ptot Tj BCW29 > 120 < 260 max. max. max. max, max. BCW30 215 500 32 V 32 V 200 mA 250 mW 150 ° C fT typ. 150 MHz F< 10 dB Continental Device India Limited Data Sheet Page 1 of 3 BCW29 BCW30 RATINGS (at TA = 25°C unless otherwise specified) Limiting value
