BCW29 - SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Download the BCW29 datasheet PDF. This datasheet also covers the BCW30 variant, as both devices belong to the same silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

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BCW29 silicon planar epitaxial transistors by CDIL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BCW30-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BCW29
Manufacturer	CDIL
File Size	76.04 KB
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BCW29 Datasheet

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Other Datasheets by CDIL

Part Number	Description
BCW30	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60A	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60B	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60C	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60D	SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –Ic = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz hFE –VCB0 –VCE0 –ICM Ptot Tj BCW29 > 120 < 260 max. max. max. max, max.