BCW29 datasheet by Continental Device India.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BCW29 |
|---|---|
| Datasheet | BCW29 BCW30 Datasheet (PDF) |
| File Size | 76.04 KB |
| Manufacturer | Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
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current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Collector base voltage (open emitter) Collector emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz IC = 10 mA; VCE = 5 V Noise figure at RS = 2 kW Ic = 200 mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BCW29 | PNP general purpose transistors | NXP |
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BCW29 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
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BCW29 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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BCW29 | PNP General Purpose Transistors | Kexin |
 |
BCW29 | Silicon Planar Epitaxial Transistor | Philips |
View all Continental Device India datasheets
| Part Number | Description |
|---|---|
| BCW30 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60C | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60D | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61C | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61D | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW65A | GENERAL PURPOSE TRANSISTOR |
