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BCW70 - Transistor

Download the BCW70 datasheet PDF. This datasheet also covers the BCW69 variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BCW69-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BCW70
Manufacturer CDIL
File Size 213.38 KB
Description Transistor
Datasheet download datasheet BCW70 Datasheet

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Other Datasheets by CDIL

Part Number Description
BCW71 SILICON PLANAR EPITAXIAL TRANSISTORS
BCW72 SILICON PLANAR EPITAXIAL TRANSISTORS
BCW29 SILICON PLANAR EPITAXIAL TRANSISTORS
BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60A SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kΩ –IC = 200 µA; –VCE = 5 V; f = 1 kHz; B = 200 Hz BCW69 > 120 hFE < –VCB0 max. –VCE0 max. –ICM max. Ptot max. Tj max. 260 BCW70 215 500 50 V 45 V 200 mA 250 mW 150 ° C fT typ.