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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCX17 BCX18
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking BCX17 = T1 BCX18 = T2
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain
–IC = 100 mA; –VCE = 1 V Transition frequency
–IC = 10 mA; –VCE = 5 V; f = 35 MHz
–VCES –VCE0 –ICM Ptot Tj
BCX17 max. 50 max. 45 max. max. max.
BCX18
30 V
25 V
1000
mA
250 mW
150 ° C
hFE 100 to 600
fT typ.
BCX17 Datasheet
