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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCX19 BCX20
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N transistors
Marking BCX19 = U1 BCX20 = U2
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base)
Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain
IC: 100 mA; VCE = 1 V Transition frequency
IC = 10 mA; VCE = 5 V; f = 35 MHz
VCES VCE0
BCX19 max. 50 max. 45
BCX20 30 V 25 V
ICM max. Ptot max. Tj max.
1000 250 150
mA
mW °C
hFE 100 to 600
fT typ.
BCX19 Datasheet
