Continental Device India BCX19
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BCX19 |
|---|---|
| Datasheet | BCX19 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain IC: 100 mA; VCE = 1 V Transition frequency IC = 10 mA; VCE = 5 V; f = 35 MHz VCES VCE0 BCX19 max. 50 max. 45 BCX20 30 V 25 V ICM max. Ptot max. Tj max. 1000 250 150 mA mW °C hFE 100 to 600 fT typ. 200 MHz Continental Device India Limited Data Sheet Page 1 of 4 BCX19 BCX20 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) IC = 10 mA Emitter–base voltage (open collector) Collector current (d.c.) Collector current (peak value) Emitter current (peak value) Base current (d.c.) Base current (peak value) Total power dissipation up to Tamb = 25 °C* Storage temperature Junction temperature VCES VCE0 VEB0 IC ICM –IEM lB IBM Ptot Tstg Tj BCX19 max. 50 BCX20 30 V max. max. max. max. max. max. max. max. max.
