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BCX41 Datasheet PDF

Continental Device India BCX41

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. BCX41
Datasheet BCX41 Download
Manufacturer
Continental Device India
Description NPN Transistor
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BCX41 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC)

DESCRIPTION

SYMBOL Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Peak Pulse Current ICM Continuous Collector Current IC Base Current IB Power Dissipation Ptot Operating and Storage Temperature Range Tj,Tstg 2 VALUE 125 125 5.0 1.0 800 100 330 - 55 to +150 UNITS V V V A mA mA mW ºC Electrical Characterstics (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL CONDITIONS Collector Base Cut Off Current ICES VCE=100V, VBE=0 VCE=100V, VBE=0, Tamb=150ºC Collector Cut Off Current Emitter Cut Off Current Collector Emitter Saturation Voltage ICEX IEBO *VCE (sat) VCE=100V, VBE=0.2V, Tamb=85ºC VCE=100V, VBE=0.2V, Tamb=125ºC VEB=4V, IC=0 IC=300mA, IB=30mA Base Emitter Saturation Voltage DC Current Gain *VBE (sat) hFE IC=300mA, IB=30mA IC=100µA, VCE=1V *IC=100mA, VCE=1V Transition Frequency Output Capacitance *Pulse width=300µs, duty cycle=2% fT CobO *IC=200mA, VCE=1V IC=10mA, VCE=5V, f=20 MHz VCB=10V, IE=0, f=1MHz MIN...
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