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BCX41 - Transistor

Key Features

  • SOT23 NPN silicon planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCES VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 125 125 5 1 800 100 330 -55 to +150 Unit.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Transistors Medium Power Transistor BCX41 Features SOT23 NPN silicon planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCES VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 125 125 5 1 800 100 330 -55 to +150 Unit V V V A mA mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.