FEATURES
SOT23 NPN silicon planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCES VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 125 125 5 1 800 100 330 -55 to +150 Unit V V V A mA mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-emitter cut-off current Emitter-base current Collector-emitter saturation voltage * Base-emitter saturation voltage * DC current gain * Transitional frequency Output capacitance * Pulse test: tp = 300 ìs; d 0.02. Symbol Testconditons VCE=100V ICES VCE=100V,Tamb = 150 ICEX VCE=100V,VBE=0.2V, Tamb = 85 VCE=100V,VBE=0.2V, Tamb = 125 IEBO VEB=4V VCE(sat) IC=300mA, IB=30mA VBE(sat)...