BU508F
BU508F is NPN POWER TRANSISTORS manufactured by Continental Device India.
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
NPN POWER TRANSISTORS
BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package
.. C
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction
- Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60
- 65 to +150 150 UNIT V V V A W ºC ºC
Rth (j-c)
ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) . TEST CONDITIONS DESCRIPTION SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)- IB =0, IC=100m A Collector Emitter Sustaining Voltage VEBO IE=10m A, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF h FE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat)
- IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat)
- IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time
MIN 700 5.0
MAX 1.0
UNIT m A V V m A
300 2.25 2.0 1.0 5.0 1.5
V V V V ts tf
IC=4.5A,h FE=2.5,VCC=140V LC=0.9m H, LB=3µH
7.0 0.5
µs µs
- Pulse test: Pulse Duration <300µ s , Duty cycle < 1.5%.
Continental Device India Limited
Data Sheet
Page 1 of 3
BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package TO-3P (TO-218) Plastic Package
DIM A B C
MIN 15.80 5.20 3.80 Ø 3.30 14.50 33.25 20.75 11.50 1.00 18.75 0.40...
