Datasheet4U Logo Datasheet4U.com

BU508FI - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

color TV receivers.

📥 Download Datasheet

Datasheet preview – BU508FI

📁 Similar Datasheet

  • BU508F - NPN POWER TRANSISTORS (CDIL)
  • BU508F - NPN POWER TRANSISTORS (TRANSYS Electronics)
  • BU508 - SILICON POWER TRANSISTOR (SavantIC)
  • BU508A - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS (ST Microelectronics)
  • BU508A - SILICON POWER TRANSISTOR (SavantIC)
  • BU508A - NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR (CDIL)
  • BU508A - Silicon Diffused Power Transistor (Philips)
  • BU508A - Horizontal Deflection Transistors (Multicomp)
  • BU508A - HIGH VOLTAGE FAST-SWITCHING SILICON NPN POWER TRANSISTOR (Thinki Semiconductor)
  • BU508A - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 1500 V 700 V 8 V 8 A 15 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W BU508FI isc website： www.iscsemi.
Published: |