BU508F
BU508F is NPN POWER TRANSISTORS manufactured by TRANSYS Electronics.
DESCRIPTION
Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction
- Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60
- 65 to +150 150 UNIT V V V A W ºC ºC
Rth (j-c)
ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) . TEST CONDITIONS DESCRIPTION
SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)- IB =0, IC=100m A Collector Emitter Sustaining Voltage VEBO IE=10m A, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF h FE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat)
- IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat)
- IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time
MIN 700 5.0
MAX 1.0
UNIT m A V V m A
300 2.25 2.0 1.0 5.0 1.5
V V V V ts tf
IC=4.5A,h FE=2.5,VCC=140V LC=0.9m H, LB=3µH
7.0 0.5
µs µs
- Pulse test: Pulse Duration <300µ s , Duty cycle < 1.5%.
BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package TO-3P (TO-218) Plastic Package
DIM A B C
MIN 15.80 5.20 3.80 Ø 3.30 14.50 33.25 20.75 11.50 1.00 18.75 0.40 3.15
MAX 16.40 5.70 4.20 Ø 3.60 15.10 36.75 21.25 12.25 1.30 21.65 0.60 3.45
..
D E F G H
F 1 2 3 K P P M N L
5.21 5.72 P S 18.75 19.25 All diminsions in mm.
Pin Configuration 1. Base 2. Collector 3. Emitter
Packing Detail
PACKAGE Details TO-3P STANDARD PACK Net Weight/ Qty Size 3" x 7.5" x 7.5" INNER CARTO N BOX Qty 0.3K Size 17" x 15" x 13.5" OUTER CARTON BOX Qty 4.8K Gr Wt 42 kgs 100 pcs/ polybag 628 gm/ 100...