Datasheet Details
| Part number | CD13003 |
|---|---|
| Manufacturer | CDIL |
| File Size | 48.61 KB |
| Description | NPN Silicon Power Transistor |
| Datasheet | CD13003_CDIL.pdf |
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Overview: Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN SILICON POWER TRANSISTOR CD13003 TO-126 MARKING: CD 13003 Applications. Suitable for Lighting, Switching Regulator and Motor Control.
| Part number | CD13003 |
|---|---|
| Manufacturer | CDIL |
| File Size | 48.61 KB |
| Description | NPN Silicon Power Transistor |
| Datasheet | CD13003_CDIL.pdf |
|
|
|
SYMBOL VALUE VCBO 600 Collector -Base Voltage VCEO 400 Collector -Emitter ( sus) Voltage VEBO 9.0 Emitter -Base Voltage IC 1.5 Collector Current Continuous ICM 3.0 Peak (1) IB 0.75 Base Current Continuous IBM 1.5 Peak (1) IE 2.25 Emitter Current Continuous IEM 4.5 Peak (1) PD 1.4 Power Dissipation @ Ta=25 deg C 11.2 Derate Above 25 deg C PD 45 Power Dissipation @ Tc=25 deg C 320 Derate Above 25 deg C Tj, Tstg -65 to +150 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth (j-c) 3.12 Junction to Case Rth (j-a) 89 Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8" from Case TL 275 for 5 Seconds.
(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10% ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCBO IC=1mA, IE=0 600 Collector -Base Voltage VCEO(sus)* IC=10mA, IB=0 400 Collector -Emitter ( sus) Voltage ICBO VCB=600V, IE=0 Collector-Cuttoff Current VCB=600V, IE=0,TC=100 deg C IEBO VEB=9V, IC=0 Emitter-Cuttoff Current hFE* IC=0.5A,VCE=5V 8.0 DC Current Gain IC=2A,VCE=5V 5.0 - UNIT V V V A A A A A A W mW /deg C W mW /deg C deg C deg C/W deg C/W deg C MAX 1.0 5.0 1.0 40 25 UNIT V V mA mA mA Continental Device India Limited Data Sheet Page 1 of 3 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCE(Sat) * IC=0.5A, IB=0.1A Collector Emitter Saturation Voltage IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A,TC=100deg C VBE(Sat) * IC=0.5A, IB=0.1A Base Emitter Saturation Voltage IC=1A, IB=0.25A IC=1A, IB=0.25A,TC=100deg C DYNAMIC CHARACTERISTICS ft IC=100mA, VCE=10V Current Gain- Bandwidth Pro
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|---|---|
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