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CD13005 Datasheet PDF

Continental Device India CD13005

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. CD13005
Datasheet CD13005 Download
Manufacturer
Continental Device India
Description NPN SILICON POWER TRANSISTOR
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CD13005 datasheet page 1 preview

APPLICATIONS

Suitable for Lighting, Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter ( sus) Voltage VEBO Emitter -Base Voltage IC Collector Current Continuous ICM Peak (1) IB Base Current Continuous IBM Peak (1) IE Emitter Current Continuous IEM Peak (1) PD Power Dissipation @ Tc=25ºC Derate Above 25ºC Tj, Tstg Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case Rth (j-a) Junction to Ambient Maximum Lead Temperature for Soldering TL Purposes: 1/8" from Case for 5 Seconds. (1) Pulse Test: Pulse Width= 5ms Duty Cycle =10% VALUE 600 400 9.0 2 4 0.75 1.5 2.25 4.5 60 320 -65 to +150 UNIT V V V A A A A A A W mW/ºC ºC 3.12 89 275 ºC/W ºC/W ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC Unless Otherwise Specified)

DESCRIPTION

Collector -Base Voltage Collector -Emitter ( sus) Voltage Collector-Cuttoff Current Emitter-Cuttoff Current SYMBOL VCBO VCEO(sus)* ICBO IEBO TEST CONDITION MIN IC=1mA, IE=0 600 IC=10mA, IB=0 400 VCB=600V, IE=0 VCB=600V, IE=0,TC=100ºC VEB=9V, IC=0 TYP MAX 1.0 5.0 1.
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