CD13005 Datasheet | Continental Device India

DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter ( sus) Voltage VEBO Emitter -Base Voltage IC Collector Current Continuous ICM Peak (1) IB Base Current Continuous IBM Peak (1) IE Emitter Current Continuous IEM Peak (1) PD Power Dissipation @ Tc=25ºC Derate Above 25ºC Tj, Tstg Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case Rth (j-a) Junction to Ambient Maximum Lead Temperature for Soldering TL Purposes: 1/8" from Case for 5 Seconds. (1) Pulse Test: Pulse Width= 5ms Duty Cycle =10% VALUE 600 400 9.0 2 4 0.75 1.5 2.25 4.5 60 320 -65 to +150 UNIT V V V A A A A A A W m W/ºC ºC 3.12 89 275 ºC/W ºC/W ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified) DESCRIPTION Collector -Base Voltage Collector -Emitter ( sus) Voltage Collector-Cuttoff Current Emitter-Cuttoff Current SYMBOL VCBO VCEO(sus)- ICBO IEBO TEST CONDITION MIN IC=1m A, IE=0 600 IC=10m A, IB=0 400 VCB=600V, IE=0 VCB=600V, IE=0,TC=100ºC VEB=9V, IC=0 TYP MAX 1.0 5.0 1.0 UNIT V V m A m A m A Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified) DESCRIPTION DC Current Gain SYMBOL TEST CONDITION h FE- IC=0.5A, VCE=5V (1) Note IC=2A,VCE=5V Collector Emitter Saturation Voltage VCE(Sat) - IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A,TC=100 C Base Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Current Gain- Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Turn on Time Fall Time Storage Time (1) h FE Classifications:Note:- Product is pre selected in DC current gain (Groups A to F). CDIL reserves the right to ship any of the groups according to production availability. MARKING - Pulse Test:- PW=300µs, Duty Cycle=2% CDA 13005 CDB 13005 CDC 13005 CDE 13005 CDF 13005 ton tf tstg A 11 -16 VCC=125V IB1=0.2A,IB2=0.2A IC=1A B 15 -19 C 18-22 E 21-25 1.1 0.7 4.0 F 24-30 µs µs µs ft Cob...