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SOT-23 Formed SMD Package
CMBTA05 CMBTA06
SILICON EPITAXIAL TRANSISTORS
N–P–N transistor
Marking CMBTA05 = 1H CMBTA06 = 1G
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain hFE IC = 100 mA; VCE = 1 V Transition frequency at f = 100 MHz fT IC = 10 mA; VCE = 2 V Collector–emitter saturation voltage VCEsat IC = 100 mA; IB = 10 mA CMBT A05 max. 60 max. 60 max. max. max. min.