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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA55 CMBTA56
SILICON EPITAXIAL TRANSISTORS
P–N–P transistor
Marking CMBTA55 = 2H CMBTA56 = 2G
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C D.C. current gain –IC = 100 mA; –VCE = 1 V Transition frequency at f = 100 MHz –IC = 100 mA; –VCE = 1 V Collector–emitter saturation voltage –IC = 100 mA; IB = 10 mA –V CBO –V CEO –V EBO –IC Ptot hFE fT VCEsat CMBT A55 max. 60 max. 60 max. max.
CMBTA55 Datasheet
