CMBTA06 Datasheet | Continental Device India

.. Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N- P- N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector- base voltage (open emitter) VCBO Collector- emitter voltage (open base) VCEO Emitter- base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain h FE IC = 100 m A; VCE = 1 V Transition frequency at f = 100 MHz f T IC = 10 m A; VCE = 2 V Collector- emitter saturation voltage VCEsat IC = 100 m A; IB = 10 m A CMBT A05 max. 60 max. 60 max. max. max. min. min. max. A06 80 V 80 V V m A m W 4 500 250 100 100 0.25 MHz Continental Device India Limited Data Sheet Page 1 of 3 .. CMBTA05 CMBTA06 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector- base voltage (open emitter) VCBO Collector- emitter voltage (open base) VCEO Emitter- base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j- t + Rth t- s + Rth s- a) + Tamb Thermal resistance from junction to ambient max. max. max. max. max. max. max. 60 60 80 V 80 V 4 V 500 m A 250 m W - 55 to +150 °C 150 °C Rth j- a = K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) CMBT A05 Collector- emitter breakdown voltage V(BR)CEO min. 60 IC = 1 m A; IB = 0 Emitter- base breakdown voltage V(BR)EBO min. IC = 0; IE = 100 µA Collector cut- off current ICEO max. VCE = 60 V; IB = 0 ICBO max. 0.1 VCB = 60 V; IE = 0 ICBO max. VCB = 80 V; IE = 0 Saturation voltages VCEsat max. IC = 100 m A; IB = 10 m A Base- emitter on voltage VBE(on) max. IC = 100 m A; VCE = 1 V D.C. current gain h FE min. IC = 10 m A; VCE = 1 V h FE min. IC = 100 m A; VCE = 1 V Transition...