• Part: MPSA14
  • Description: NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 157.61 KB
MPSA14 Datasheet (PDF) Download
Continental Device India
MPSA14

Description

SYMBOL VALUE Collector -Emitter Voltage VCES 30 Collector -Base Voltage VCBO 30 Emitter -Base Voltage VEBO 10 Collector Current -Continuous IC 500 Power Dissipation @ Ta=25 degC PD 625 Derate above 25 deg C 5.0 Power Dissipation @ Tc=25 degC PD 1.5 Derate above 25 deg C 12 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range Junction to Case Rth(j-c) 83.3 Junction to Ambient Rth(j-a) 200 DESCRIPTION SYMBOL TEST CONDITION Min Collector -Emitter Voltage VCES IC=100uA,IB=0 30 Collector-Cut off Current ICBO VCB=30V, IE=0 - Emitter-Cut off Current IEBO VEB=10V, IC=0 - DC Current Gain hFE • MPSA13 IC=10mA,VCE=5V 5.0 MPSA14 10 Max - 100 100 - MPSA13 IC=100mA.