MPSA18 Datasheet | Fairchild Semiconductor

Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 m A. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings- µ TA = 25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Parameter Value 45 45 6.5 100 -55 to +150 Units V V V m A °C Collector Current - Continuous Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPSA18 625 5.0 83.3 200 Units m W m W/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO I CBO Collector-Emitter Breakdown Voltage- Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 m A, IB = 0 IC = 100 µ A, I E = 0 IE = 10 µ A, IC = 0 VCB = 30 V, IE = 0 45 45 6.5 50 V V V n A ON CHARACTERISTICS- h FE DC Current Gain VCE = 5.0 V, IC = 10 µ A VCE = 5.0 V, IC = 100 µ A VCE = 5.0 V, IC = 1.0 m A VCE = 5.0 V, IC = 10 m A I C = 10 m A, I B = 0.5 m A I C = 50 m A, I B = 5.0 m A VCE = 5.0 V, IC = 1.0 m A 400 500 500...