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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Low Noise Transistor
NPN Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
45 Vdc 45 Vdc 6.5 Vdc 200 mAdc 625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA(1)
200
Thermal Resistance, Junction to Case
RqJC
83.
MPSA18 Datasheet
