Description
ollector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Of Current Collector Cut Off Current Emitter Cut off Current VCEO VCES VCBO VEBO ICBO ICES IEBO IC=1mA, IB=0 MPSA44 MPSA45 IC=100µA, VBE=0 MPSA44 MPSA45 IC=100µA, IE=0 MPSA44 MPSA45 IE=10µA, IC=0 V CB=400V, IE=0, MPSA44 VCB=320V, IE=0, MPSA45 VCE=400V, VBE = 0, MPSA44 VCE=320V, VBE = 0, MPSA45 VEB=4V, IC = 0 MPSA44 MPSA45 500 400 400 350 6.0 300 625 5.0 1.5 12 - 55 to +150 UNITS V V V mA mW mW/ºC W mW/ºC ºC 83.3 ºC 200 ºC MIN MAX UNITS 400 V 350 V 500 V 400 V 500 V 400 V 6V 100 nA 100 nA 500 nA 500 nA 100 nA Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS EBC DESCRIPTION SYMBOL TEST CONDITION DC Current Gain • hFE VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA Collector Emitter Saturation Voltage • VCE (sat) IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA Base Emitter Saturation Voltage • VBE (sat) IC=10mA, IB=1mA DYNAMIC CHARACTERISTICS DESCRIPTION Output Capacitance Input Capacitance Small Signal Current Gain SYMBOL Cobo Cibo hfe TEST CONDITION VCB=20V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz IC=10mA, VCE=10V, f=10MHz • Pulse test: Pulse Width <300µs, Duty Cycle<2% MPSA44 MPSA45 TO-92 Plastic Package MIN MAX UNITS 40 50 200 45 40 0.40 V 0.50 V 0.75 V 0.75 V MIN MAX UNITS 7 pF 130 pF 2 Continental Device India Limited Data Sheet Page 2 of 5 L Dimension With 'L' Uncontrolled B 1 2 3 D AA G FF KA E MPSA44 MPSA45 TO-92 Plastic Package TO-92 Plastic Package D SEC AA DIM MIN.
