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2SC5015 Datasheet PDF

CEL 2SC5015

NPN EPITAXIAL SILICON RF TRANSISTOR

Part No. 2SC5015
Datasheet 2SC5015 Download
Manufacturer
CEL
Description NPN EPITAXIAL SILICON RF TRANSISTOR
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2SC5015 datasheet page 1 preview

FEATURES

● High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
● Low voltage operation
● Low noise and high gain
● 4-pin super minimold (18) package ORDERING INFORMATION Part Number 2SC5015 2SC5015-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form
● 8 mm wide embossed taping
● Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS

(TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Ratings 9 6 2 30 150 150 −65 to +150 Unit V V V mA mW °C °C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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