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NE662M04 Datasheet

NPN Silicon High Frequency Transistor

Manufacturer: CEL

Datasheet Details

Part number NE662M04
Manufacturer CEL
File Size 409.25 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet NE662M04_CEL.pdf

NE662M04 Overview

NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance.

NE662M04 Key Features

  • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW
  • SOT-343 footprint, with a height of just 0.59 mm
  • Flat Lead Style for better RF performance M04

NE662M04 Distributor