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NE662M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR

General Description

NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.

With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz.

The NE662M04 provides excellent low voltage/low current performance.

Key Features

  • HIGH GAIN.

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Datasheet Details

Part number NE662M04
Manufacturer CEL
File Size 409.25 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE662M04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm • Flat Lead Style for better RF performance M04 DESCRIPTION NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications.