NE688 Datasheet | CEL

.. SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Features - LOW PHASE NOISE DISTORTION - LOW NOISE: 1.5 d B at 2.0 GHz - LOW VOLTAGE OPERATION - LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 m A - AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES - ALSO AVAILABLE IN CHIP FORM 18 (SOT 343 STYLE) NE688 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) rs e b m : u E n ot T t n O r . e a N r n p a g E S si ng heet A i e E d w w PL llo as r e t o o n f a f d r e T h CHARACTERISTICS his ded fo office ELECTRICAL t fro m mmen sales l o rec se cal a Ple ils: a det 8818 N E 6 8 8 39 NE6 8839R NE6 NEC's NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688's low phase noise distortion and high f T make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount package styles, and in chip form. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68818 2SC5194 18 NE68819 2SC5195 19 NE68830 2SC5193 30 NE68833 2SC5191 33 f T f T NFMIN NFMIN |S21E|2 |S21E|2 h FE ICBO IEBO CRE4 PT RTH(J-A) Gain Bandwidth Product at VCE = 1V, IC = 3 m A, f = 2.0 GHz Gain Bandwidth Product at VCE = 3V, IC = 20 m A, f = 2.0 GHz Minimum Noise Figure at VCE = 1 V, I C = 3 m A, f = 2.0 GHz Minimum Noise Figure at VCE = 3 V, I C = 7 m A, f = 2.0 GHz Insertion Power Gain at VCE = 1V, IC = 3 m A, f = 2.0 GHz Insertion Power Gain at VCE = 3V, IC = 20 m A, f = 2.0 GHz Forward Current Gain3 at VCE = 1 V, I C = 3 m A Collector Cutoff Current at VCB = 5 V, IE = 0 m A Emitter Cutoff Current at VEB = 1 V, IC = 0 m A Feedback Capacitance at VCB = 1 V, I E = 0 m A, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Ambient) GHz 4...