Download the NE85619-A datasheet PDF.
This datasheet also covers the NE85619 variant, as both devices belong to the same npn silicon epitaxial transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
fromVHF band to UHF band.
Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
Key Features
Low Voltage Use.
High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Full PDF Text Transcription for NE85619-A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NE85619-A. For precise diagrams, and layout, please refer to the original PDF.
SILICON TRANSISTOR NE85619 / 2SC5006 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial si...
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PER MINI MOLD DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique. +0.1 –0 0.3 +0.1 –0.05 FEATURES • Low Voltage Use. • High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7
NE85619-A Datasheet
