• Part: NE85619-A
  • Description: NPN SILICON EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: CEL
  • Size: 4.33 MB
NE85619-A Datasheet (PDF) Download
CEL
NE85619-A

Key Features

  • Low Voltage Use.
  • High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
  • Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
  • Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
  • High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
  • Ultra Super Mini Mold Package.