NE85619 - NPN SILICON EPITAXIAL TRANSISTOR

Product Overview

CEL

NE85619 NPN SILICON EPITAXIAL TRANSISTOR by CEL - Datasheet Preview — Datasheet preview – NE85619

Datasheet Details

Part number	NE85619
Manufacturer	CEL
File Size	4.33 MB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	NE85619 Datasheet
Additional preview pages of the NE85619 datasheet.

Product details

Description

The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band.Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique.+0.1 0 0.3 +0.1 0.05

Features

Low Voltage Use.
High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz).
Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Ultra Super Mini Mold Package.

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Other Datasheets by CEL

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Published: Mar 14, 2015 |