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NE85619-T1-A - NPN SILICON EPITAXIAL TRANSISTOR

This page provides the datasheet information for the NE85619-T1-A, a member of the NE85619 NPN SILICON EPITAXIAL TRANSISTOR family.

Datasheet Summary

Description

fromVHF band to UHF band.

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Features

  • Low Voltage Use.
  • High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz).
  • Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • Ultra Super Mini Mold Package.

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Datasheet preview – NE85619-T1-A

Datasheet Details

Part number NE85619-T1-A
Manufacturer CEL
File Size 4.33 MB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet NE85619-T1-A Datasheet
Additional preview pages of the NE85619-T1-A datasheet.

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Full PDF Text Transcription

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SILICON TRANSISTOR NE85619 / 2SC5006 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique. +0.1 –0 0.3 +0.1 –0.05 FEATURES • Low Voltage Use. • High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • High |S21e|2: 9 dB TYP.
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