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CEA3252
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
D
D SOT-89
S D G
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 5 IDM 20
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
Units V V A A W C
Units C/W
This is preliminary information on a new product in development now .
CEA3252 Datasheet
